Películas delgadas de nitruro de aluminio (ALN)
DOI:
https://doi.org/10.22517/23447214.1291Abstract
Este documento pretende hacer una revisión de las principales características estructurales y morfológicas del nitruro de aluminio –AlN- específicamente cuando este es depositado por Magnetrón Sputtering ó por medio de Ablación Láser (PLD). Igualmente como influyen los parámetros de crecimiento como presión de gas ambiente (N2), temperatura de sustrato o tiempo de deposición en la calidad y orientación cristalina de las películas delgadas de AlN.Downloads
Downloads
-
Vistas(Views): 408
- PDF (Español (España)) Descargas(Downloads): 348
Published
How to Cite
Issue
Section
License
The undersigned authors declare that the article submitted to the journal Scientia et Technica is an original work and that all its content is free of third-party copyright restrictions or has the corresponding authorizations. Consequently, the authors assume responsibility for any litigation or claim related to intellectual property rights, releasing the Technological University of Pereira and the journal Scientia et Technica from any liability.
If the submitted work is accepted for publication, the authors retain copyright to the article and grant the journal Scientia et Technica the right of first publication, as well as a non-exclusive, perpetual license to reproduce, edit, distribute, display, and publicly communicate the article in any medium or format, including print, electronic, databases, repositories, the Internet, or other scientific dissemination systems. The authors agree that the article will be published in open access and distributed under the Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License (CC BY-NC-SA 4.0).
The journal Scientia will respect in all cases the moral rights of the authors, in accordance with the provisions of article 30 of Law 23 of 1982 of the Republic of Colombia, recognizing the authorship of the work, the right to integrity and the right of disclosure, which are inalienable and non-waivable.