Graphite Thin Films Production by Laser Ablation.


Authors

DOI:

https://doi.org/10.22517/23447214.18771

Keywords:

Laser Ablation, Graphite, Graphene Oxide, Raman spectroscopy, UV-Vis spectroscopy.

Abstract

Graphite thin films on silicon substrate were synthesized by the fundamental and second harmonics of a Nd : YAG pulsed laser, varying the substrate temperature from 200°C to 500°C . The oxygen gas pressure was of 2x10-5 Torr for all thin films grown. The samples were characterized by Raman and UV-Vis spectroscopy. With Raman spectroscopy the vibrational modes D, G and 2D, were identified. A strong dependence of the Absorbance of samples with substrate temperature was observed. The nanostructure of sample grown at 500°C corresponding to graphene oxide. The average thick of thin films was of 65 nm and 40 nm for fundamental and second harmonics respectively.

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Published

2018-12-30

How to Cite

Riascos Landázuri, H., Marin, J. M., López Vargas, J. D., & Cuenca Vargas, J. P. (2018). Graphite Thin Films Production by Laser Ablation. Scientia Et Technica, 23(4), 594–598. https://doi.org/10.22517/23447214.18771

Issue

Vol. 23 No. 4 (2018)

Section

Ciencias Básicas

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