ESTUDIOS POR FOTORREFLECTANCIA Y AUGER DE LA REACTIVIDAD DE PELICULAS DE CdTe SOMETIDAS A FLUJOS DE Zn o Se
Abstract
Se presentan los resultados obtenidos de la caracterización óptica por medio de la técnica de Fotorreflectancia (FR) y Auger de heteroestructuras de CdTe/GaAs crecidas por epitaxia de haces moleculares (Molecular Beam Epitaxy, MBE). Las películas de CdTe fueron crecidas sobre substratos de GaAs con espesores nominales de 100 Å. Cada una de estas películas fue expuesta separadamente a flujos de Zn o Se. El cambio en la forma de línea y el incremento de la señal en los puntos críticos E0 y E0+ Δ 0 en el espectro de FR del GaAs es un indicativo de la reactividad que se presenta en la superficie de la heteroestructura de CdTe/GaAs.Downloads
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